the firm's post-grant practitioners are some of the most experienced in the country.

Eric W. Schweibenz
Vincent K. Shier, Ph.D.
Yuki  Onoe
Nicholas  Rosa, Ph.D.
Peifang  Tian, Ph.D.
Yanwen  Fei
Andrew M. Ollis
Jay E. Rowe, Jr., Ph.D.
Craig R. Feinberg
Stefan Uwe  Koschmieder, Ph.D.
Jeffrey B. McIntyre
Brian B. Darville
J. Derek  Mason, Ph.D., CLP
Jenchieh (Joseph) Yuan
Kurt M. Berger, Ph.D.
Tia D. Fenton
Kevin L. Hartman, Ph.D.
Derek  Lightner, Ph.D.
Thomas M. Cunningham, Ph.D.
Anna Z. Lloyd
Elissa L. Sanford
Erik M. Stang, Ph.D.
Edwin D. Garlepp
Sameer  Gokhale
Kasumi  Kanetaka
Nanlin  Wang, Ph.D.
Akihiro  Yamazaki
Eckhard H. Kuesters
Philippe J.C. Signore, Ph.D.
Colin B. Harris
Ryan W. Smith
Aristotelis M. Psitos
Christopher I. Donahue
Steven B. Chang
Yorikatsu  Hohokabe, Ph.D.
Alec M. Royka
Aldo  Martinez
Robert T. Pous
Surinder  Sachar
Norman F. Oblon
Teddy S. Gron
Dale M. Shaw
Marina I. Miller, Ph.D.
Robert  Tarcu
Bogdan A. Zinchenko
John S. Kern
Kevin M. McKinley
John F. Presper
Alexander B. Englehart
Christopher  Ricciuti
Matthew H. Everhart, Ph.D.
Long  Phan, Ph.D.
Jianping (James)  Wu
Yin Y. Nelson, Ph.D.
Richard D. Kelly
Ching-Cheng (Tony)  Chang
Tao  Feng, Ph.D.
David M. Longo, Ph.D.
Arthur I. Neustadt
Stephen G. Baxter, Ph.D.
James R. Love
Charles L. Gholz
Carl E. Schlier
Daniel J. Pereira, Ph.D.
Maki  Saitoh
Yuanyi (Alex) Zhang
Kevin Ross  Davis
Soumya  Panda
Grace E. Kim
Chika (Teranishi) Iitoyo
Robert W. Downs
Michael R. Casey, Ph.D.
Johnny  Ma
Frank J. West
Diane  Jones
John  Sipos

Technologies

Artificial Intelligence (AI)
Artificial Intelligence (AI)
Digital Health
Digital Health
Energy & Renewables
Energy & Renewables

Fast Facts

About Our

Law Firm

About Our Law Firm

Headquartered within steps of the USPTO with an affiliate office in Tokyo, Oblon is one of the largest law firms in the United States focused exclusively on intellectual property law.

Get to know our

History

Get to know our History

1968
Norman Oblon with Stanley Fisher and Marvin Spivak launched what was to become Oblon, McClelland, Maier & Neustadt, LLP, one of the nation's leading full-service intellectual property law firms.

Our Local and

Global Reach

Our Local and Global Reach

Outside the US, we service companies based in Japan, France, Germany, Italy, Saudi Arabia, and farther corners of the world. Our culturally aware attorneys speak many languages, including Japanese, French, German, Mandarin, Korean, Russian, Arabic, Farsi, Chinese.

A few of our

ACCOLADES

A few of our ACCOLADES

Oblon's professionals provide industry-leading IP legal services to many of the world's most admired innovators and brands.

OPPORTUNITIES FOR YOUR

Career

OPPORTUNITIES FOR YOUR Career

From the minute you walk through our doors, you'll become a valuable part of a team that fosters a culture of innovation, client service and collegiality.

A few ways to

GET In Touch

A few ways to GET In Touch
US Office

Telephone: 703-413-3000
Learn More +


Tokyo Office

Telephone: +81-3-6212-0550
Learn More +

Downloadable

Patent Forms

Downloadable Patent Forms

The United States Patent and Trademark Office (USPTO) issued final rules implementing the inventor's oath or declaration provisions of the America Invents Act (AIA) on August 14, 2012.

Yanwen  Fei

Yanwen Fei

Technical Advisor ∙ US Office
E: yfei@oblon.com
T: (703) 413-3000
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Yanwen (Julia) Fei is a technical advisor in the firm’s Electrical Patent Prosecution practice group. Ms. Fei has over a decade of engineering and research experience in the integrated circuit (IC) industry, which includes IC design, IC manufacturing and IC testing.

Prior to joining the firm, Ms. Fei was a technical specialist at an Alexandria, Virginia IP law firm, where she drafted and prosecuted patent applications in electrical arts. She has experience in various technologies which include processors, storage devices, wireless communication, switching devices, printing devices, LED lighting devices and controllers.

Ms. Fei was a Ph.D. candidate at Carnegie Mellon University doing research in IC design for manufacturing and testing. She established a product-based methodology for process-induced variation characterization. In addition, she developed techniques for industrial data analysis to extract process-induced variations, which utilized spatial and temporal frequency analysis and physical sensitivity analysis to decompose a convoluted wafer map into elemental process variation wafer maps. She also created new yield models based on industrial data showing that accurate yield prediction is achievable at early stages of IC design.

Ms. Fei gained industrial experience at Motorola, working as a device engineer, test engineer and product engineer at numerous wafer fabrication and testing facilities. Ms. Fei also worked for PDF Solutions as a summer intern and worked for Philips Semiconductor as an extern.


Education

  • Carnegie Mellon University (Ph.D. candidate)
    • Electrical and Computer Engineering
  • Tsinghua University, Beijing, China (M.S.)
    • Microelectronics
  • Tsinghua University, Beijing, China (B.S.)
    • Electrical Engineering

Citations

Publications:

  • Y. Fei, P. Simon, W. Maly, “New Yield Models for DSM Manufacturing”, International Electron Devices Meeting, 2000, pp. 845 – 848.
  • T. Vogels, T. Zanon, R, Desineni, R.D. Blanton, W. Maly, J.G. Brown, J.E. Nelson, Y. Fei, X. Huang, P. Gopalakrishnan, M. Mishra, V. Rovner, S. Tiwary, “Benchmarking Diagnosis Algorithms with a Diverse Set of IC Deformations”, International Test Conference, 2004, pp. 508 – 517.
  • U.S. Patent No.7,348,594

Languages

  • Chinese

Services

Technologies